Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate

D. Y. Hori; R. Kou; T. Tsuchizawa; Y. Kobayashi; Y. Harada; H. Hibino; T. Yamamoto; K. Yamada; H. Nakajima

doi:10.1109/GROUP4.2016.7739064

Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate

D. Y. Hori, R. Kou, T. Tsuchizawa, Y. Kobayashi, Y. Harada, H. Hibino, T. Yamamoto, K. Yamada, H. Nakajima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al₂O₃ gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.

Original language	English
Title of host publication	2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
Publisher	IEEE Computer Society
Pages	90-91
Number of pages	2
Volume	2016-November
ISBN (Electronic)	9781509019038
DOIs	https://doi.org/10.1109/GROUP4.2016.7739064
Publication status	Published - 2016 Nov 8
Event	13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, China Duration: 2016 Aug 24 → 2016 Aug 26

Other

Other	13th IEEE International Conference on Group IV Photonics, GFP 2016
Country/Territory	China
City	Shanghai
Period	16/8/24 → 16/8/26

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

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10.1109/GROUP4.2016.7739064

Cite this

Hori, D. Y., Kou, R., Tsuchizawa, T., Kobayashi, Y., Harada, Y., Hibino, H., Yamamoto, T., Yamada, K., & Nakajima, H. (2016). Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate. In 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016 (Vol. 2016-November, pp. 90-91). Article 7739064 IEEE Computer Society. https://doi.org/10.1109/GROUP4.2016.7739064

Hori, DY, Kou, R, Tsuchizawa, T, Kobayashi, Y, Harada, Y, Hibino, H, Yamamoto, T, Yamada, K & Nakajima, H 2016, Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate. in 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016. vol. 2016-November, 7739064, IEEE Computer Society, pp. 90-91, 13th IEEE International Conference on Group IV Photonics, GFP 2016, Shanghai, China, 16/8/24. https://doi.org/10.1109/GROUP4.2016.7739064

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title = "Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate",

abstract = "We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al2O3 gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.",

author = "Hori, {D. Y.} and R. Kou and T. Tsuchizawa and Y. Kobayashi and Y. Harada and H. Hibino and T. Yamamoto and K. Yamada and H. Nakajima",

year = "2016",

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doi = "10.1109/GROUP4.2016.7739064",

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AU - Hori, D. Y.

AU - Kou, R.

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AU - Harada, Y.

AU - Hibino, H.

AU - Yamamoto, T.

AU - Yamada, K.

AU - Nakajima, H.

PY - 2016/11/8

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N2 - We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al2O3 gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.

AB - We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al2O3 gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.

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M3 - Conference contribution

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BT - 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016

PB - IEEE Computer Society

T2 - 13th IEEE International Conference on Group IV Photonics, GFP 2016

Y2 - 24 August 2016 through 26 August 2016

ER -

Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate

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