We have fabricated ambipolar light-emitting field-effect transistors made of 1,4-bis(5-phenylthiophen-2-yl)benzene (AC5) single crystals, which have 35% fluorescent quantum efficiency. The obtained hole and electron mobilities were 2.9× 10-1 cm2 /V s and 6.7× 10-3 cm 2 /V s, respectively. These are the highest values among AC5 transistors. Importantly, although the light emission from the crystal surface was less than the detection level of the camera, we observed bright and polarized light emission from the edge of the single crystals. This polarized edge emission is attributed to the strong self-assembled light-confining nature and perfectly aligned transition dipole moments, which are advantageous for future laser devices.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)