Abstract
The chemical vapor deposition of indium phosphide using the In/HCl/PH3/H2 reactant system is described. The deposition kinetics were studied as function of reactant concentration and substrate temperature. Studies of deposition of both polycrystalline and single crystalline material indicated that the growth rate of the thin films was limited by surface kinetics via a Langmuir-type absorption mechanism. Stoichiometry of the gas phase influenced the electrical properties of the as-grown epitaxial layers. For a group V/III ratio of 0.70 in the growth ambient, net donor densities of 1.5 x 1016 cm-3 were observed in the undoped epitaxial layers. Transient capacitance spectroscopy indicated deep level concentrations of the order 1-10 x 1014 cm-3 in the n and p-type epitaxial InP.
| Original language | English |
|---|---|
| Pages (from-to) | 55-61 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 323 |
| DOIs | |
| Publication status | Published - 1982 Sept 15 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering