Growth and characterization of ZnMgTe/ZnTe layered structures grown by molecular beam epitaxy

S. Imada*, T. Baba, S. Sakurasawa, M. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)


ZnMgTe/ZnTe layered structures were grown on ZnTe substrates by molecular beam epitaxy, and the crystal structures were characterized using X-ray diffraction methods. This structure would be the waveguide for various optoelectronic devices. Therefore, the crystal quality of this layered structure would be very crucial for the realization of high performance devices. ZnMgTe is lattice mismatched to ZnTe, and the increase of the ZnMgTe layer thickness or Mg mole fraction ratio would result in the crystal quality deterioration of the layered structure. The critical layer thickness (CLT) was theoretically derived, and various structures with various ZnMgTe layer thickness and Mg mole fraction were grown. The lattice mismatch strain relief and crystal quality of those samples were investigated by means of X-ray reciprocal space mapping (RSM) and cross sectional transmission electron microscopy (TEM). The dislocation formation and the lattice mismatch relaxation were confirmed for various samples and it was revealed that the calculated CLT values could be used as an appropriate guideline to design the dislocation free and high performance device structures.

Original languageEnglish
Pages (from-to)1473-1475
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 2010
Event14th International Conference on II-VI Compounds, II-VI 2009 - St. Petersburg, Russian Federation
Duration: 2009 Aug 232009 Aug 28


  • Defects
  • MBE
  • Multlayers
  • Structure
  • ZnMgTe/ZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics


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