Growth and characterization of ZnSe-ZnTe strained-layer superlattices

Masakazu Kobayashi; Rhuhei Kimura; Makoto Konagai; Kiyoshi Takahashi

doi:10.1016/0022-0248(87)90440-4

Growth and characterization of ZnSe-ZnTe strained-layer superlattices

Masakazu Kobayashi^*, Rhuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

ZnSe-ZnTe strained-layer superlattices (SLSs) were grown on InP, GaAs and InAs substrates by molecular beam epitaxy (MBE). The samples were characterized by transmission electron microscopy (TEM) observation, and photoluminescence (PL) measurement techniques. Uniform and fine superlattice structures were confirmed by TEM observation. Moreover, a distinguishable change in the direction of (111) lattice-fringes from ZnSe layer to ZnTe layer was clearly observed in lattice image observation. The PL peak energy depended on the thickness of the alternating layers and the luminescence was related to the size quantization of the SLS structure. The luminescence peak was also affected by the substrate materials.

Original language	English
Pages (from-to)	495-500
Number of pages	6
Journal	Journal of Crystal Growth
Volume	81
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(87)90440-4
Publication status	Published - 1987 Feb 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(87)90440-4

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title = "Growth and characterization of ZnSe-ZnTe strained-layer superlattices",

abstract = "ZnSe-ZnTe strained-layer superlattices (SLSs) were grown on InP, GaAs and InAs substrates by molecular beam epitaxy (MBE). The samples were characterized by transmission electron microscopy (TEM) observation, and photoluminescence (PL) measurement techniques. Uniform and fine superlattice structures were confirmed by TEM observation. Moreover, a distinguishable change in the direction of (111) lattice-fringes from ZnSe layer to ZnTe layer was clearly observed in lattice image observation. The PL peak energy depended on the thickness of the alternating layers and the luminescence was related to the size quantization of the SLS structure. The luminescence peak was also affected by the substrate materials.",

author = "Masakazu Kobayashi and Rhuhei Kimura and Makoto Konagai and Kiyoshi Takahashi",

note = "Funding Information: The authors would like to express their thanks to Dr. K. Urabe for his technical assistance in TEM observation. This work is supported in part by the special coordination funds of the Science and Technology Agency of the Japanese Government, and in part by the Hosou Bunka Foundation.",

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T1 - Growth and characterization of ZnSe-ZnTe strained-layer superlattices

AU - Kobayashi, Masakazu

AU - Kimura, Rhuhei

AU - Konagai, Makoto

AU - Takahashi, Kiyoshi

N1 - Funding Information: The authors would like to express their thanks to Dr. K. Urabe for his technical assistance in TEM observation. This work is supported in part by the special coordination funds of the Science and Technology Agency of the Japanese Government, and in part by the Hosou Bunka Foundation.

PY - 1987/2/2

Y1 - 1987/2/2

N2 - ZnSe-ZnTe strained-layer superlattices (SLSs) were grown on InP, GaAs and InAs substrates by molecular beam epitaxy (MBE). The samples were characterized by transmission electron microscopy (TEM) observation, and photoluminescence (PL) measurement techniques. Uniform and fine superlattice structures were confirmed by TEM observation. Moreover, a distinguishable change in the direction of (111) lattice-fringes from ZnSe layer to ZnTe layer was clearly observed in lattice image observation. The PL peak energy depended on the thickness of the alternating layers and the luminescence was related to the size quantization of the SLS structure. The luminescence peak was also affected by the substrate materials.

AB - ZnSe-ZnTe strained-layer superlattices (SLSs) were grown on InP, GaAs and InAs substrates by molecular beam epitaxy (MBE). The samples were characterized by transmission electron microscopy (TEM) observation, and photoluminescence (PL) measurement techniques. Uniform and fine superlattice structures were confirmed by TEM observation. Moreover, a distinguishable change in the direction of (111) lattice-fringes from ZnSe layer to ZnTe layer was clearly observed in lattice image observation. The PL peak energy depended on the thickness of the alternating layers and the luminescence was related to the size quantization of the SLS structure. The luminescence peak was also affected by the substrate materials.

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Growth and characterization of ZnSe-ZnTe strained-layer superlattices

Abstract

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