Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si

Yoshiko Tsuji; Makoto Mizukami; Suguru Noda

doi:10.1016/j.tsf.2007.08.002

Growth mechanism of epitaxial CoSi₂ on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi₂/Si

Yoshiko Tsuji, Makoto Mizukami, Suguru Noda^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The growth mechanism of epitaxial CoSi₂ was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSi_x, although at the early stage of CoSi₂ growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi₂ layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSi_x. However, the surface of CoSi₂ became rough when the deposition rate was much slower than the Co diffusion rate through CoSi_x. The roughness was caused by the formation of CoSi₂ (111) facets at the interface between CoSi₂ and the Si substrate. Si/CoSi₂/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

Original language	English
Pages (from-to)	3989-3995
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	12
DOIs	https://doi.org/10.1016/j.tsf.2007.08.002
Publication status	Published - 2008 Apr 30
Externally published	Yes

Keywords

Cobalt silicide
Epitaxy
Si
Sputtering
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.08.002

Cite this

@article{79165a2cca0841738b1647581d9c035a,

title = "Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si",

abstract = "The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.",

keywords = "Cobalt silicide, Epitaxy, Si, Sputtering, X-ray diffraction",

author = "Yoshiko Tsuji and Makoto Mizukami and Suguru Noda",

note = "Funding Information: We gratefully acknowledge Prof. Hiroshi Komiyama for his helpful discussions and Mr. Shinichi Nakamura for his assistance in the TEM operation. This research was partly financially supported by the Industrial Technology Research Grant Program in 2000 (No. 00B64024c) from the New Energy and Industrial Technology Development Organization (NEDO) of Japan and by the Grant-in-Aid for Scientific Research (A) (No. 15206086) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.",

year = "2008",

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doi = "10.1016/j.tsf.2007.08.002",

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TY - JOUR

T1 - Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si

AU - Tsuji, Yoshiko

AU - Mizukami, Makoto

AU - Noda, Suguru

N1 - Funding Information: We gratefully acknowledge Prof. Hiroshi Komiyama for his helpful discussions and Mr. Shinichi Nakamura for his assistance in the TEM operation. This research was partly financially supported by the Industrial Technology Research Grant Program in 2000 (No. 00B64024c) from the New Energy and Industrial Technology Development Organization (NEDO) of Japan and by the Grant-in-Aid for Scientific Research (A) (No. 15206086) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.

PY - 2008/4/30

Y1 - 2008/4/30

N2 - The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

AB - The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

KW - Cobalt silicide

KW - Epitaxy

KW - Si

KW - Sputtering

KW - X-ray diffraction

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