Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Yasuyuki Kobayashi*, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

Original languageEnglish
Pages (from-to)3519-3521
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2006 Apr 25
Externally publishedYes


  • Boron nitride
  • Flow-rate modulation epitaxy
  • Parasitic reaction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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