Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Yasuyuki Kobayashi; Toshiki Makimoto

doi:10.1143/JJAP.45.3519

Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Yasuyuki Kobayashi^*, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH ₃). The growth rate of the BN decreased as the NH₃ flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH₃. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

Original language	English
Pages (from-to)	3519-3521
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3519
Publication status	Published - 2006 Apr 25
Externally published	Yes

Keywords

Boron nitride
Flow-rate modulation epitaxy
Parasitic reaction

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.3519

Cite this

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title = "Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy",

abstract = "Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.",

keywords = "Boron nitride, Flow-rate modulation epitaxy, Parasitic reaction",

author = "Yasuyuki Kobayashi and Toshiki Makimoto",

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language = "English",

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T1 - Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

AU - Kobayashi, Yasuyuki

AU - Makimoto, Toshiki

PY - 2006/4/25

Y1 - 2006/4/25

N2 - Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

AB - Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

KW - Boron nitride

KW - Flow-rate modulation epitaxy

KW - Parasitic reaction

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ER -

Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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