Abstract
CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.
Original language | English |
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Pages (from-to) | 1684-1687 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2000 May |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering