Growth of heavily boron-doped polycrystalline superconducting diamond

Hitoshi Umezawa*, Tomohiro Takenouchi, Kensaku Kobayashi, Yoshihiko Takano, Masanori Nagao, Minoru Tachiki, Takeshi Hatano, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The introduction of a high concentration of boron into polycrystalline diamond films is realized by the chemical vapor deposition of the films. The growth parameter a, which is determined as the growth direction, depends on growth conditions such as the methane concentrations and B/C ratio. With an increase in methane concentration or B/C ratio, 〈111〉-faceted growth is frequently observed. From X-ray diffraction measurement, the 〈111〉-textured growth of the film is confirmed under high-α conditions. The diamond film grown, which has an extremely low resistivity (1.23 mΩ·cm), shows a transition to superconductivity at 5.6 K. For films grown under high-α conditions, for which the surface energy of the {111} face is low, a higher Tc is observed.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalNew Diamond and Frontier Carbon Technology
Issue number1
Publication statusPublished - 2007


  • Diamond
  • Heavily boron-doped
  • Superconductivity
  • Transition temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Growth of heavily boron-doped polycrystalline superconducting diamond'. Together they form a unique fingerprint.

Cite this