Growth of high-density carbon nanotube forests on conductive TiSiN supports

Junwei Yang, Santiago Esconjauregui*, Alex W. Robertson, Yuzheng Guo, Toby Hallam, Hisashi Sugime, Guofang Zhong, Georg S. Duesberg, John Robertson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 1012 tubes cm-2 and mass densities of about 0.3 g cm-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlOx layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.

Original languageEnglish
Article number083108
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2015 Feb 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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