Growth of high-density carbon nanotube forests on conductive TiSiN supports

Junwei Yang; Santiago Esconjauregui; Alex W. Robertson; Yuzheng Guo; Toby Hallam; Hisashi Sugime; Guofang Zhong; Georg S. Duesberg; John Robertson

doi:10.1063/1.4913762

Growth of high-density carbon nanotube forests on conductive TiSiN supports

Junwei Yang, Santiago Esconjauregui^*, Alex W. Robertson, Yuzheng Guo, Toby Hallam, Hisashi Sugime, Guofang Zhong, Georg S. Duesberg, John Robertson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 10¹² tubes cm^-2 and mass densities of about 0.3 g cm^-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlO_x layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.

Original language	English
Article number	083108
Journal	Applied Physics Letters
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.4913762
Publication status	Published - 2015 Feb 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of high-density carbon nanotube forests on conductive TiSiN supports",

abstract = "We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 1012 tubes cm-2 and mass densities of about 0.3 g cm-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlOx layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.",

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AU - Yang, Junwei

AU - Esconjauregui, Santiago

AU - Robertson, Alex W.

AU - Guo, Yuzheng

AU - Hallam, Toby

AU - Sugime, Hisashi

AU - Zhong, Guofang

AU - Duesberg, Georg S.

AU - Robertson, John

PY - 2015/2/23

Y1 - 2015/2/23

N2 - We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 1012 tubes cm-2 and mass densities of about 0.3 g cm-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlOx layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.

AB - We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 1012 tubes cm-2 and mass densities of about 0.3 g cm-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlOx layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.

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Growth of high-density carbon nanotube forests on conductive TiSiN supports

Abstract

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