@inproceedings{b68f08f891e941bc882f913dad53c35c,
title = "Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers",
abstract = "We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.",
keywords = "direct bonding, epitaxial growth, semiconductor laser, silicon photonics",
author = "Takuro Fujii and Koji Takeda and Erina Kanno and Hidetaka Nishi and Koichi Hasebe and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",
note = "Publisher Copyright: {\"i}¿½ 2016 IEEE.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528823",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
}