@inproceedings{f344d6e113314ca395d2faa81021fbcb,
title = "Growth of large diameter 4H-SiC by TSSG technique",
abstract = "4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called {"}Immersion Guide (IG){"} which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability.",
keywords = "3-inch, 4H-SiC, Convection, Immersion guide, Solution growth",
author = "K. Kusunoki and N. Yashiro and N. Okada and K. Moriguchi and K. Kamei and M. Kado and H. Daikoku and H. Sakamoto and H. Suzuki and T. Bessho",
year = "2013",
doi = "10.4028/www.scientific.net/MSF.740-742.65",
language = "English",
isbn = "9783037856246",
volume = "740-742",
series = "Materials Science Forum",
pages = "65--68",
booktitle = "Materials Science Forum",
note = "9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 ; Conference date: 02-09-2012 Through 06-09-2012",
}