Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto*, Kazuhide Kumakura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

Original languageEnglish
Pages (from-to)20-25
Number of pages6
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number3
Publication statusPublished - 2006 Mar
Externally publishedYes


  • Extrinsic base regrowth
  • Heterojunction bipolar transistor (HBT)
  • High-power electronics
  • Nitride semiconductor
  • p-type InGaN

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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