Hall effect in organic single-crystal field-effect transistors

Jun Takeya*, Koichi Yamada, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
Publication statusPublished - 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA
Duration: 2006 Apr 172006 Apr 21


Other2006 MRS Spring Meeting
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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