Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

J. Senzaki*, K. Fukuda, Y. Ishida, Y. Tanaka, H. Tanoue, Naoto Kobayashi, T. Tanaka, K. Arai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27


OtherWide-Bandgap Electronic Devices
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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