TY - JOUR
T1 - Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors
AU - Chang, Jui Fen
AU - Sakanoue, Tomo
AU - Olivier, Yoann
AU - Uemura, Takafumi
AU - Dufourg-Madec, Marie Beatrice
AU - Yeates, Stephen G.
AU - Cornil, Jérôme
AU - Takeya, Jun
AU - Troisi, Alessandro
AU - Sirringhaus, Henning
PY - 2011/8/2
Y1 - 2011/8/2
N2 - Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.
AB - Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.
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U2 - 10.1103/PhysRevLett.107.066601
DO - 10.1103/PhysRevLett.107.066601
M3 - Article
C2 - 21902350
AN - SCOPUS:79961118766
SN - 0031-9007
VL - 107
JO - Physical Review Letters
JF - Physical Review Letters
IS - 6
M1 - 066601
ER -