Hall effect of quasi-hole gas in organic single-crystal transistors

Jun Takeya*, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

152 Citations (Scopus)


Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number46-49
Publication statusPublished - 2005 Nov 25
Externally publishedYes


  • Hall effect
  • OFET
  • Organic field-effect transistor
  • Rubrene
  • Single-crystal FET

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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