TY - JOUR
T1 - Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy
AU - Iida, Tsutomu
AU - Harada, Kentaro
AU - Kimura, Shinji
AU - Shima, Takayuki
AU - Katsumata, Hiroshi
AU - Makita, Yunosuke
AU - Shibata, Hajime
AU - Kobayashi, Naoto
AU - Uekusa, Shin ichiro
AU - Matsumori, Tokue
AU - Kudo, Kazuhiro
PY - 1995/12/2
Y1 - 1995/12/2
N2 - Low-energy (170 eV) C+ ion-beam doping during molecular beam epitaxy of GaAs was carried out using a combined ion beam and molecular beam epitaxy (CIBMBE) system. Incorporated C atoms were both electrically and optically well-activated as acceptors with doping levels up to 4 × 1019 cm-3 in the as-grown condition. In low temperature (2 K) photoluminescence (PL) spectra, C-related specific emissions were clearly observed, indicating good quality of the films. To understand the advantages of low-energy process by CIBMBE, film quality and the rate of C activation were compared with those obtained from 400 keV hot implantation of C at substrate temperatures up to 600°C. Through Raman scattering, 2 K PL and Hall effect measurements, it was found that the use of a low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms.
AB - Low-energy (170 eV) C+ ion-beam doping during molecular beam epitaxy of GaAs was carried out using a combined ion beam and molecular beam epitaxy (CIBMBE) system. Incorporated C atoms were both electrically and optically well-activated as acceptors with doping levels up to 4 × 1019 cm-3 in the as-grown condition. In low temperature (2 K) photoluminescence (PL) spectra, C-related specific emissions were clearly observed, indicating good quality of the films. To understand the advantages of low-energy process by CIBMBE, film quality and the rate of C activation were compared with those obtained from 400 keV hot implantation of C at substrate temperatures up to 600°C. Through Raman scattering, 2 K PL and Hall effect measurements, it was found that the use of a low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms.
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U2 - 10.1016/0168-583X(95)00691-5
DO - 10.1016/0168-583X(95)00691-5
M3 - Article
AN - SCOPUS:24244441485
SN - 0168-583X
VL - 106
SP - 133
EP - 136
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-4
ER -