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Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy
Tsutomu Iida*, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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(Scopus)