Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki; M. Iwamoto; K. Usami; K. Mukai; A. Hiraiwa

doi:10.1007/BF02521296

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki^*, M. Iwamoto, K. Usami, K. Mukai, A. Hiraiwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the¹⁶O(³He, p)¹⁸F reaction. By³He bombardment of samples propertly arranged under consideration of the¹⁸F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm² of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

Original language	English
Pages (from-to)	449-459
Number of pages	11
Journal	Journal of Radioanalytical Chemistry
Volume	52
Issue number	2
DOIs	https://doi.org/10.1007/BF02521296
Publication status	Published - 1979 Sept
Externally published	Yes

ASJC Scopus subject areas

Radiology Nuclear Medicine and imaging
Molecular Medicine

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title = "Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers",

abstract = "Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.",

author = "T. Nozaki and M. Iwamoto and K. Usami and K. Mukai and A. Hiraiwa",

year = "1979",

month = sep,

doi = "10.1007/BF02521296",

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volume = "52",

pages = "449--459",

journal = "Journal of Radioanalytical Chemistry",

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T1 - Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

AU - Nozaki, T.

AU - Iwamoto, M.

AU - Usami, K.

AU - Mukai, K.

AU - Hiraiwa, A.

PY - 1979/9

Y1 - 1979/9

N2 - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

AB - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

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DO - 10.1007/BF02521296

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JO - Journal of Radioanalytical Chemistry

JF - Journal of Radioanalytical Chemistry

IS - 2

ER -

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

Abstract

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