Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

Mohd Syamsul; Nobutaka Oi; Satoshi Okubo; Taisuke Kageura; Hiroshi Kawarada

doi:10.1109/LED.2017.2774290

Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

Mohd Syamsul^*, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( L_GD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 10⁹ were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.

Original language	English
Article number	815093
Pages (from-to)	51-54
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/LED.2017.2774290
Publication status	Published - 2018 Jan

Keywords

Diamond
FETs
heteroepitaxial
high voltage
two-dimensional hole gas

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2017.2774290

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title = "Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications",

abstract = "The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( LGD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 109 were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.",

keywords = "Diamond, FETs, heteroepitaxial, high voltage, two-dimensional hole gas",

author = "Mohd Syamsul and Nobutaka Oi and Satoshi Okubo and Taisuke Kageura and Hiroshi Kawarada",

note = "Funding Information: Manuscript received September 25, 2017; revised October 25, 2017; accepted November 6, 2017. Date of publication December 1, 2017; date of current version December 27, 2017. This work was supported in part by a Grant-in-Aid for Fundamental Research S from JSPS under Grant 26220903 and in part by the Advanced Low Carbon Technology Research and Development Program of JST. The review of this letter was arranged by Editor D. G. Senesky. (Corresponding author: Mohd Syamsul.) M. Syamsul, N. Oi, S. Okubo, and T. Kageura are with the Faculty of Science and Engineering, Institute of Nano-Science and Nano-Engineering, Waseda University, Tokyo 169-8555, Japan (e-mail: naysriq@asagi.waseda.jp ). Publisher Copyright: {\textcopyright} 2017 IEEE.",

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doi = "10.1109/LED.2017.2774290",

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AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received September 25, 2017; revised October 25, 2017; accepted November 6, 2017. Date of publication December 1, 2017; date of current version December 27, 2017. This work was supported in part by a Grant-in-Aid for Fundamental Research S from JSPS under Grant 26220903 and in part by the Advanced Low Carbon Technology Research and Development Program of JST. The review of this letter was arranged by Editor D. G. Senesky. (Corresponding author: Mohd Syamsul.) M. Syamsul, N. Oi, S. Okubo, and T. Kageura are with the Faculty of Science and Engineering, Institute of Nano-Science and Nano-Engineering, Waseda University, Tokyo 169-8555, Japan (e-mail: naysriq@asagi.waseda.jp ). Publisher Copyright: © 2017 IEEE.

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N2 - The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( LGD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 109 were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.

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Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

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Keywords

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