Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

Minoru Tachiki; Toyokatsu Fujisaki; Norikazu Taniyama; Minoru Kudo; Hiroshi Kawarada

doi:10.1016/S0022-0248(01)02067-X

Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

Minoru Tachiki, Toyokatsu Fujisaki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.

Original language	English
Pages (from-to)	1277-1280
Number of pages	4
Journal	Journal of Crystal Growth
Volume	237-239
Issue number	1 4 II
DOIs	https://doi.org/10.1016/S0022-0248(01)02067-X
Publication status	Published - 2002 Apr

Keywords

A1. Nucleation
A3. Chemical vapor deposition processes
A3. Vapor-phase epitaxy
B1. Diamond

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(01)02067-X

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@article{49c31f4287c64413bd6a22c0fa396435,

title = "Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition",

abstract = "Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.",

keywords = "A1. Nucleation, A3. Chemical vapor deposition processes, A3. Vapor-phase epitaxy, B1. Diamond",

author = "Minoru Tachiki and Toyokatsu Fujisaki and Norikazu Taniyama and Minoru Kudo and Hiroshi Kawarada",

note = "Funding Information: This work is supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2002",

month = apr,

doi = "10.1016/S0022-0248(01)02067-X",

language = "English",

volume = "237-239",

pages = "1277--1280",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1 4 II",

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TY - JOUR

T1 - Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

AU - Tachiki, Minoru

AU - Fujisaki, Toyokatsu

AU - Taniyama, Norikazu

AU - Kudo, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2002/4

Y1 - 2002/4

N2 - Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.

AB - Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.

KW - A1. Nucleation

KW - A3. Chemical vapor deposition processes

KW - A3. Vapor-phase epitaxy

KW - B1. Diamond

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U2 - 10.1016/S0022-0248(01)02067-X

DO - 10.1016/S0022-0248(01)02067-X

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SN - 0022-0248

VL - 237-239

SP - 1277

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1 4 II

ER -

Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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