Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

H. Kawarada*, C. Wild, N. Herres, R. Locher, P. Koidl, H. Nagasawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)


We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity.

Original languageEnglish
Pages (from-to)3490-3493
Number of pages4
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 1997 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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