Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition

Masahiro Katoh; Hiroshi Kawarada

doi:10.1143/JJAP.34.3628

Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition

Masahiro Katoh, Hiroshi Kawarada^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.

Original language	English
Pages (from-to)	3628-3630
Number of pages	3
Journal	Japanese journal of applied physics
Volume	34
Issue number	7R
DOIs	https://doi.org/10.1143/JJAP.34.3628
Publication status	Published - 1995 Jul

Keywords

CVD
ECR plasma
Heteroepitaxial growth
Microwave plasma
Tungsten
Tungsten carbide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.3628

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title = "Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition",

abstract = "Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.",

keywords = "CVD, ECR plasma, Heteroepitaxial growth, Microwave plasma, Tungsten, Tungsten carbide",

author = "Masahiro Katoh and Hiroshi Kawarada",

year = "1995",

month = jul,

doi = "10.1143/JJAP.34.3628",

language = "English",

volume = "34",

pages = "3628--3630",

journal = "Japanese journal of applied physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition

AU - Katoh, Masahiro

AU - Kawarada, Hiroshi

PY - 1995/7

Y1 - 1995/7

N2 - Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.

AB - Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.

KW - CVD

KW - ECR plasma

KW - Heteroepitaxial growth

KW - Microwave plasma

KW - Tungsten

KW - Tungsten carbide

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U2 - 10.1143/JJAP.34.3628

DO - 10.1143/JJAP.34.3628

M3 - Article

AN - SCOPUS:0029344868

SN - 0021-4922

VL - 34

SP - 3628

EP - 3630

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 7R

ER -

Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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