TY - JOUR
T1 - Hexagonal boron nitride grown by MOVPE
AU - Kobayashi, Y.
AU - Akasaka, T.
AU - Makimoto, T.
N1 - Funding Information:
We thank Dr. Makoto Kasu for fruitful discussion and beneficial suggestions. We also thank Dr. Keiichi Torimitsu and Dr. Junji Yumoto for their support in this study, Dr. Takehiko Tawara for help with CL measurements, and Dr. Hiroki Hibino for the formation of the graphite layer on the 6H–SiC substrate. This work was partly supported by a Grant-in-Aid for Scientific Research (A) #18206004 from the Japan Society for the Promotion of Science.
PY - 2008/11/15
Y1 - 2008/11/15
N2 - Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN.
AB - Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN.
KW - A3. Low press. metalorganic vapor phase epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2008.07.057
DO - 10.1016/j.jcrysgro.2008.07.057
M3 - Article
AN - SCOPUS:56249148490
SN - 0022-0248
VL - 310
SP - 5048
EP - 5052
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 23
ER -