Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

Y. Kobayashi*, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH3) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH3 flow rates and longer NH3 exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.

Original languageEnglish
Pages (from-to)325-327
Number of pages3
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
Publication statusPublished - 2007 Jan 1
Externally publishedYes


  • A3. Low press
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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