Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

Y. Kobayashi; T. Nakamura; T. Akasaka; T. Makimoto; N. Matsumoto

doi:10.1016/j.jcrysgro.2006.10.034

Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

Y. Kobayashi^*, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH₃) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH₃ flow rates and longer NH₃ exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.

Original language	English
Pages (from-to)	325-327
Number of pages	3
Journal	Journal of Crystal Growth
Volume	298
Issue number	SPEC. ISS
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.034
Publication status	Published - 2007 Jan 1
Externally published	Yes

Keywords

A3. Low press
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.10.034

Cite this

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title = "Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy",

abstract = "Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH3) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH3 flow rates and longer NH3 exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.",

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author = "Y. Kobayashi and T. Nakamura and T. Akasaka and T. Makimoto and N. Matsumoto",

year = "2007",

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doi = "10.1016/j.jcrysgro.2006.10.034",

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T1 - Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

AU - Kobayashi, Y.

AU - Nakamura, T.

AU - Akasaka, T.

AU - Makimoto, T.

AU - Matsumoto, N.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH3) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH3 flow rates and longer NH3 exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.

AB - Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH3) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH3 flow rates and longer NH3 exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.

KW - A3. Low press

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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VL - 298

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS

ER -

Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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