Abstract
Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.
| Original language | English |
|---|---|
| Pages (from-to) | 231-235 |
| Number of pages | 5 |
| Journal | Institute of Physics Conference Series |
| Volume | 174 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 2002 Oct 7 → 2002 Oct 10 |
ASJC Scopus subject areas
- Physics and Astronomy(all)