High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure

Kouichi Akahane; Atsushi Matsumoto; Toshimasa Umezawa; Naokatsu Yamamoto; Tetsuya Kawanishi

High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure

Kouichi Akahane, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.

Original language	English
Title of host publication	2016 International Semiconductor Laser Conference, ISLC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523069
Publication status	Published - 2016 Dec 2
Event	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan Duration: 2016 Sept 12 → 2016 Sept 15

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
Country/Territory	Japan
City	Kobe
Period	16/9/12 → 16/9/15

Keywords

characteristic temperature
quantum dot
ridge-waveguide laser
strain-compensation

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. / Akahane, Kouichi; Matsumoto, Atsushi; Umezawa, Toshimasa et al.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765802.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akahane, K, Matsumoto, A, Umezawa, T, Yamamoto, N & Kawanishi, T 2016, High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765802, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.

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abstract = "A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.",

keywords = "characteristic temperature, quantum dot, ridge-waveguide laser, strain-compensation",

author = "Kouichi Akahane and Atsushi Matsumoto and Toshimasa Umezawa and Naokatsu Yamamoto and Tetsuya Kawanishi",

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AU - Akahane, Kouichi

AU - Matsumoto, Atsushi

AU - Umezawa, Toshimasa

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2016/12/2

Y1 - 2016/12/2

N2 - A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.

AB - A ridge-waveguide laser with highly stacked InAs quantum dot structure based on strain compensation technique was fabricated. The threshold current of this laser was decreased to approximately 75 mA without coating the facet mirror. A high characteristic temperature of over 100 K was obtained using this laser.

KW - characteristic temperature

KW - quantum dot

KW - ridge-waveguide laser

KW - strain-compensation

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M3 - Conference contribution

AN - SCOPUS:85014169769

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

High characteristic temperature for ridge-waveguide laser with a highly stacked InAs quantum dot structure

Abstract

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Keywords

ASJC Scopus subject areas

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