High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kazuhide Kumakura*, Toshiki Makimoto, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

Original languageEnglish
Pages (from-to)793-798
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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