High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 10¹⁷ cm^-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

Original language	English
Pages (from-to)	793-798
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002
Externally published	Yes
Event	GaN and Related Alloys-2001 - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{1c89645e27d747fd97f882f69a38da39,

title = "High common-emitter current gains obtained by pnp GaN bipolar junction transistors",

abstract = "We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.",

author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",

year = "2002",

language = "English",

volume = "693",

pages = "793--798",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys-2001 ; Conference date: 26-11-2001 Through 30-11-2001",

}

TY - JOUR

T1 - High common-emitter current gains obtained by pnp GaN bipolar junction transistors

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2002

Y1 - 2002

N2 - We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

AB - We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0036374104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036374104&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036374104

SN - 0272-9172

VL - 693

SP - 793

EP - 798

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys-2001

Y2 - 26 November 2001 through 30 November 2001

ER -

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this