High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier

T. Umezawa; K. Akahane; A. Kanno; N. Yamamoto; K. Kashima; Tetsuya Kawanishi

doi:10.1109/MWP.2015.7356700

High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier

T. Umezawa, K. Akahane, A. Kanno, N. Yamamoto, K. Kashima, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

In this study, we successfully fabricated a W-band high-power photoreceiver with high output power and low power consumption. This W-band photoreceiver was integrated with a bias-free uni-travelling carrier photodetector (UTC-PD) and an InP high electron mobility transistor (PHEMT) amplifier for the first time. An ultrabroad 3 dB bandwidth beyond 110 GHz in an UTC-PD and maximum oscillation frequency of 320 GHz in a PHEMT low-noise amplifier were used for this hybrid integration. At 109 GHz, a high radio frequency output power of +10 dBm, high transimpedance gain of 828 □, and low power consumption of 67 mW was achieved in an optical-electrical converting process.

Original language	English
Title of host publication	2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781467393683
DOIs	https://doi.org/10.1109/MWP.2015.7356700
Publication status	Published - 2015 Dec 14
Event	International Topical Meeting on Microwave Photonics, MWP 2015 - Paphos, Cyprus Duration: 2015 Oct 26 → 2015 Oct 29

Other

Other	International Topical Meeting on Microwave Photonics, MWP 2015
Country/Territory	Cyprus
City	Paphos
Period	15/10/26 → 15/10/29

Keywords

hybrid integration
InP-PHEMT Amplifier
UTC-PD

ASJC Scopus subject areas

Signal Processing
Communication
Computer Networks and Communications

Access to Document

10.1109/MWP.2015.7356700

Cite this

Umezawa, T., Akahane, K., Kanno, A., Yamamoto, N., Kashima, K., & Kawanishi, T. (2015). High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier. In 2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings Article 7356700 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2015.7356700

High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier. / Umezawa, T.; Akahane, K.; Kanno, A. et al.
2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7356700.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Umezawa, T, Akahane, K, Kanno, A, Yamamoto, N, Kashima, K & Kawanishi, T 2015, High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier. in 2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings., 7356700, Institute of Electrical and Electronics Engineers Inc., International Topical Meeting on Microwave Photonics, MWP 2015, Paphos, Cyprus, 15/10/26. https://doi.org/10.1109/MWP.2015.7356700

Umezawa T, Akahane K, Kanno A, Yamamoto N, Kashima K, Kawanishi T. High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier. In 2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7356700 doi: 10.1109/MWP.2015.7356700

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abstract = "In this study, we successfully fabricated a W-band high-power photoreceiver with high output power and low power consumption. This W-band photoreceiver was integrated with a bias-free uni-travelling carrier photodetector (UTC-PD) and an InP high electron mobility transistor (PHEMT) amplifier for the first time. An ultrabroad 3 dB bandwidth beyond 110 GHz in an UTC-PD and maximum oscillation frequency of 320 GHz in a PHEMT low-noise amplifier were used for this hybrid integration. At 109 GHz, a high radio frequency output power of +10 dBm, high transimpedance gain of 828 □, and low power consumption of 67 mW was achieved in an optical-electrical converting process.",

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AU - Kashima, K.

AU - Kawanishi, Tetsuya

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AB - In this study, we successfully fabricated a W-band high-power photoreceiver with high output power and low power consumption. This W-band photoreceiver was integrated with a bias-free uni-travelling carrier photodetector (UTC-PD) and an InP high electron mobility transistor (PHEMT) amplifier for the first time. An ultrabroad 3 dB bandwidth beyond 110 GHz in an UTC-PD and maximum oscillation frequency of 320 GHz in a PHEMT low-noise amplifier were used for this hybrid integration. At 109 GHz, a high radio frequency output power of +10 dBm, high transimpedance gain of 828 □, and low power consumption of 67 mW was achieved in an optical-electrical converting process.

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High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier

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