High depth resolution SIMS analysis using metal cluster complex ion bombardment

M. Tomita*, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura

*Corresponding author for this work

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4 Citations (Scopus)


SIMS depth profiles were measured using metal cluster complex ions of Ir4(CO)7+ as a primary ion beam in order to obtain high depth resolution. Depth resolution was evaluated as a function of primary ion species, energy and incident angle using a multiple boron delta-doped silicon sample. The depth resolution obtained using cluster ion bombardment was considerably better than that obtained by oxygen ion bombardment under the same bombardment condition due to reduction of atomic mixing in the depth. The best depth resolution was 0.9 nm under the bombardment condition of 5 keV, 45°with oxygen flooding, which approaches the value measured with state of the art SIMS analyses. However, depth resolution was not improved by decreasing the cluster ion energy (less than 5 keV), even though the roughness of the sputtered surface was suppressed. The limit of depth resolution improvement may be caused by a carbon cover-layer that prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

Original languageEnglish
Article number012001
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2008 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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