High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications

Yong Ju Suh*, Shohei Ishikawa, Hiroshi Ohta, Ryuichi Fujimoto, Nobuyuki Itoh, Toshihiko Yoshimasu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a high dynamic range variable gain amplifier (VGA) using 130 nm CMOS technology for the triple-band W-CDMA applications. The VGA includes an active balun, a two-stage amplifier, two SPDT switches, and a V-I converter which converts a dc control voltage to the dc current for controlling the gain of the each amplifier. The operation voltage is 2.5 V. The dynamic range is over 100 dB at 800 MHz-band and 84 dB at 2 GHz-band. To realize high dynamic range with the two-stage amplifier, a novel exponential approximation function for V-I converter is proposed. The maximum output power at 800 MHz is 7 dBm with a gain of 27 dB. At this rated output power, the adjacent channel power rejection (ACPR) in +/-5 MHz offset frequency bands are -43 dBc which is highly linear performance.

Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Pages139-142
Number of pages4
DOIs
Publication statusPublished - 2008 Sept 11
Event2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing, China
Duration: 2008 Apr 212008 Apr 24

Publication series

Name2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Volume1

Conference

Conference2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
Country/TerritoryChina
CityNanjing
Period08/4/2108/4/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

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