High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone

S. Hara; H. Sato; J. K. Twynam; M. Akagi; N. Nambu; N. Tanba; K. Yokshikawa; T. Kinosada; M. Yagura; H. Tsuji; T. Shinozaki; T. Yoshimasu; T. Miyajima; T. Tomita

High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone

S. Hara^*, H. Sato, J. K. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yokshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, T. Yoshimasu, T. Miyajima, T. Tomita

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P_1dB of 24 dBm and P_1dB power added efficiency as high as 40 % are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.

Original language	English
Title of host publication	Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp
Editors	Mahesh Kumar
Publisher	Publ by IEEE
Pages	19-22
Number of pages	4
ISBN (Print)	0780313232
Publication status	Published - 1993 Dec 1
Externally published	Yes
Event	Proceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium - Atlanta, GA, USA Duration: 1993 Jun 14 → 1993 Jun 15

Publication series

Name	Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp

Other

Other	Proceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
City	Atlanta, GA, USA
Period	93/6/14 → 93/6/15

ASJC Scopus subject areas

Engineering(all)

Cite this

Hara, S., Sato, H., Twynam, J. K., Akagi, M., Nambu, N., Tanba, N., Yokshikawa, K., Kinosada, T., Yagura, M., Tsuji, H., Shinozaki, T., Yoshimasu, T., Miyajima, T., & Tomita, T. (1993). High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. In M. Kumar (Ed.), Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp (pp. 19-22). (Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp). Publ by IEEE.

High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. / Hara, S.; Sato, H.; Twynam, J. K. et al.
Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. ed. / Mahesh Kumar. Publ by IEEE, 1993. p. 19-22 (Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hara, S, Sato, H, Twynam, JK, Akagi, M, Nambu, N, Tanba, N, Yokshikawa, K, Kinosada, T, Yagura, M, Tsuji, H, Shinozaki, T, Yoshimasu, T, Miyajima, T & Tomita, T 1993, High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. in M Kumar (ed.), Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp, Publ by IEEE, pp. 19-22, Proceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Atlanta, GA, USA, 93/6/14.

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abstract = "An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P1dB of 24 dBm and P1dB power added efficiency as high as 40 % are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.",

author = "S. Hara and H. Sato and Twynam, {J. K.} and M. Akagi and N. Nambu and N. Tanba and K. Yokshikawa and T. Kinosada and M. Yagura and H. Tsuji and T. Shinozaki and T. Yoshimasu and T. Miyajima and T. Tomita",

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AU - Akagi, M.

AU - Nambu, N.

AU - Tanba, N.

AU - Yokshikawa, K.

AU - Kinosada, T.

AU - Yagura, M.

AU - Tsuji, H.

AU - Shinozaki, T.

AU - Yoshimasu, T.

AU - Miyajima, T.

AU - Tomita, T.

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N2 - An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P1dB of 24 dBm and P1dB power added efficiency as high as 40 % are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.

AB - An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P1dB of 24 dBm and P1dB power added efficiency as high as 40 % are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.

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High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone

Abstract

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ASJC Scopus subject areas

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