High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang; Y. Ishida; M. Kobayashi; H. Hirata; K. Takubo; T. Mizokawa; A. Fujimori; J. Okamoto; K. Mamiya; Y. Saito; Y. Muramatsu; H. Ott; A. Tanaka; T. Kondo; H. Munekata

doi:10.1103/PhysRevB.72.085216

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang^*, Y. Ishida, M. Kobayashi, H. Hirata, K. Takubo, T. Mizokawa, A. Fujimori, J. Okamoto, K. Mamiya, Y. Saito, Y. Muramatsu, H. Ott, A. Tanaka, T. Kondo, H. Munekata

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

Original language	English
Article number	085216
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.72.085216
Publication status	Published - 2005 Aug 15
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Hwang, J. I., Ishida, Y., Kobayashi, M., Hirata, H., Takubo, K., Mizokawa, T., Fujimori, A., Okamoto, J., Mamiya, K., Saito, Y., Muramatsu, Y., Ott, H., Tanaka, A., Kondo, T., & Munekata, H. (2005). High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N. Physical Review B - Condensed Matter and Materials Physics, 72(8), Article 085216. https://doi.org/10.1103/PhysRevB.72.085216

Hwang, JI, Ishida, Y, Kobayashi, M, Hirata, H, Takubo, K, Mizokawa, T, Fujimori, A, Okamoto, J, Mamiya, K, Saito, Y, Muramatsu, Y, Ott, H, Tanaka, A, Kondo, T & Munekata, H 2005, 'High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 8, 085216. https://doi.org/10.1103/PhysRevB.72.085216

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title = "High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N",

abstract = "We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.",

author = "Hwang, {J. I.} and Y. Ishida and M. Kobayashi and H. Hirata and K. Takubo and T. Mizokawa and A. Fujimori and J. Okamoto and K. Mamiya and Y. Saito and Y. Muramatsu and H. Ott and A. Tanaka and T. Kondo and H. Munekata",

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doi = "10.1103/PhysRevB.72.085216",

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AU - Hwang, J. I.

AU - Ishida, Y.

AU - Kobayashi, M.

AU - Hirata, H.

AU - Takubo, K.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Okamoto, J.

AU - Mamiya, K.

AU - Saito, Y.

AU - Muramatsu, Y.

AU - Ott, H.

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

AB - We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

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High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

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