High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

M. Aoki; M. Takahashi; M. Suzuki; H. Sano; K. Uomi; T. Kawano; A. Takai

doi:10.1109/68.141974

High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, T. Kawano, A. Takai

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

Original language	English
Pages (from-to)	580-582
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/68.141974
Publication status	Published - 1992 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.141974

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title = "High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique",

abstract = "local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.",

author = "M. Aoki and M. Takahashi and M. Suzuki and H. Sano and K. Uomi and T. Kawano and A. Takai",

year = "1992",

month = jun,

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T1 - High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

AU - Aoki, M.

AU - Takahashi, M.

AU - Suzuki, M.

AU - Sano, H.

AU - Uomi, K.

AU - Kawano, T.

AU - Takai, A.

PY - 1992/6

Y1 - 1992/6

N2 - local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

AB - local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

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High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

Abstract

ASJC Scopus subject areas

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