High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi*, Hitoshi Umezawa, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)


The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

Original languageEnglish
Pages (from-to)390-392
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 2001 Aug


  • Diamond
  • Hydrogen-terminated surface
  • ff

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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