High hole concentrations in Mg-doped InGaN grown by MOVPE

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1016/S0022-0248(00)00697-7

High hole concentrations in Mg-doped InGaN grown by MOVPE

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

We investigated the electrical properties of Mg-doped In_xGa_1-xN (0≤x<0.25) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped In_xGa_1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 10¹⁸ cm^-3 and obtained the maximum hole concentration of 7.8×10¹⁸ cm^-3 for x = 0.2 by optimizing the growth conditions.

Original language	English
Pages (from-to)	267-270
Number of pages	4
Journal	Journal of Crystal Growth
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00697-7
Publication status	Published - 2000 Dec
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00697-7

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title = "High hole concentrations in Mg-doped InGaN grown by MOVPE",

abstract = "We investigated the electrical properties of Mg-doped InxGa1-xN (0≤x<0.25) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 1018 cm-3 and obtained the maximum hole concentration of 7.8×1018 cm-3 for x = 0.2 by optimizing the growth conditions.",

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AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2000/12

Y1 - 2000/12

N2 - We investigated the electrical properties of Mg-doped InxGa1-xN (0≤x<0.25) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 1018 cm-3 and obtained the maximum hole concentration of 7.8×1018 cm-3 for x = 0.2 by optimizing the growth conditions.

AB - We investigated the electrical properties of Mg-doped InxGa1-xN (0≤x<0.25) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 1018 cm-3 and obtained the maximum hole concentration of 7.8×1018 cm-3 for x = 0.2 by optimizing the growth conditions.

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High hole concentrations in Mg-doped InGaN grown by MOVPE

Abstract

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