High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Tetsuya Akasaka; Hideki Gotoh; Tadashi Saito; Toshiki Makimoto

doi:10.1063/1.1804607

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Tetsuya Akasaka^*, Hideki Gotoh, Tadashi Saito, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

130 Citations (Scopus)

Abstract

InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (η_int) equals unity at 17 K, we obtained η_int as high as 0.71 even at room temperature. The reason for the high η_int is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.

Original language	English
Pages (from-to)	3089-3091
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1804607
Publication status	Published - 2004 Oct 11
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers",

abstract = "InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.",

author = "Tetsuya Akasaka and Hideki Gotoh and Tadashi Saito and Toshiki Makimoto",

year = "2004",

month = oct,

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doi = "10.1063/1.1804607",

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volume = "85",

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journal = "Applied Physics Letters",

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T1 - High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

AU - Akasaka, Tetsuya

AU - Gotoh, Hideki

AU - Saito, Tadashi

AU - Makimoto, Toshiki

PY - 2004/10/11

Y1 - 2004/10/11

N2 - InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.

AB - InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at temperatures ranging from 17 to 150 K. Assuming that the internal quantum efficiency (ηint) equals unity at 17 K, we obtained ηint as high as 0.71 even at room temperature. The reason for the high ηint is the reduction of nonradiative recombination centers by the incorporation of indium atoms into the underlying layer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

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