HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

Yuichi Matsushima; K. Sakai; S. Akiba; T. Yamamoto

HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

Yuichi Matsushima^*, K. Sakai, S. Akiba, T. Yamamoto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

4 Citations (Scopus)

Abstract

A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.

Original language	English
Title of host publication	IEE Conference Publication
Publisher	IEE
Pages	226-233
Number of pages	8
Edition	190
Publication status	Published - 1980
Externally published	Yes
Event	Eur Conf on Opt Commun, 6th - York, Engl Duration: 1980 Sept 16 → 1980 Sept 19

Other

Other	Eur Conf on Opt Commun, 6th
City	York, Engl
Period	80/9/16 → 80/9/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.",

abstract = "A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.",

author = "Yuichi Matsushima and K. Sakai and S. Akiba and T. Yamamoto",

year = "1980",

language = "English",

pages = "226--233",

booktitle = "IEE Conference Publication",

publisher = "IEE",

edition = "190",

note = "Eur Conf on Opt Commun, 6th ; Conference date: 16-09-1980 Through 19-09-1980",

}

TY - CHAP

T1 - HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

AU - Matsushima, Yuichi

AU - Sakai, K.

AU - Akiba, S.

AU - Yamamoto, T.

PY - 1980

Y1 - 1980

N2 - A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.

AB - A heterostructure avalanche photodiode (HAPD) with an In//0//. //5//3Ga//0//. //4//7As light absorption layer and an InP avalanche multiplication layer was successfully fabricated by a liquid phase epitaxy and a Zn-diffusion technique. This HAPD has yielded an extremely high avalanche gain of 1. 6 multiplied by 10**4 and a dark-current density as low as 1 multiplied by 10** minus **5 A cm** minus **2 at 0. 9 V//B.

UR - http://www.scopus.com/inward/record.url?scp=0019242860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019242860&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0019242860

SP - 226

EP - 233

BT - IEE Conference Publication

PB - IEE

T2 - Eur Conf on Opt Commun, 6th

Y2 - 16 September 1980 through 19 September 1980

ER -

HIGH MULTIPLICATION GAIN In//0//. //5//3Ga//0//. //4//7As/InP HETEROSTRUCTURE AVALANCHE PHOTODIODE (HAPD) FABRICATED BY DIFFUSION TECHNIQUE.

Abstract

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ASJC Scopus subject areas

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