TY - JOUR
T1 - High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length
AU - Umezawa, Hitoshi
AU - Tsugawa, Kazuo
AU - Yamanaka, Sadanori
AU - Takeuchi, Daisuke
AU - Okushi, Hideyo
AU - Kawarada, Hiroshi
PY - 1999/11/1
Y1 - 1999/11/1
N2 - High-performance metal-semiconductor field-effect transistors (MESFETs) using the p-type surface conductive layer on homoepitaxial diamond are demonstrated. The maximum transconductance is 110 mS/mm, which is the highest value ever reported in diamond FETs. This value exceeds the normal transconductance of a Si-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent gate length. The transconductance of the present diamond FETs is proportional to the reciprocal of gate length. Accordingly, the characteristics can be improved by the refinement of gate length. By using an appropriate FET fabrication process, it is expected that the transconductance of a diamond MESFET exceeds 500 mS/mm at gate lengths less than 0.2 μm.
AB - High-performance metal-semiconductor field-effect transistors (MESFETs) using the p-type surface conductive layer on homoepitaxial diamond are demonstrated. The maximum transconductance is 110 mS/mm, which is the highest value ever reported in diamond FETs. This value exceeds the normal transconductance of a Si-metal-oxide semiconductor field-effect transistors (MOSFET) with equivalent gate length. The transconductance of the present diamond FETs is proportional to the reciprocal of gate length. Accordingly, the characteristics can be improved by the refinement of gate length. By using an appropriate FET fabrication process, it is expected that the transconductance of a diamond MESFET exceeds 500 mS/mm at gate lengths less than 0.2 μm.
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U2 - 10.1143/jjap.38.l1222
DO - 10.1143/jjap.38.l1222
M3 - Article
AN - SCOPUS:0033225739
SN - 0021-4922
VL - 38
SP - L1222-L1224
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 11 A
ER -