High performance n-channel organic field-effect transistors based on N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

Yoshinobu Hosoi; Yukio Furukawa

doi:10.1080/15421400601009369

High performance n-channel organic field-effect transistors based on N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

Yoshinobu Hosoi^*, Yukio Furukawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The organic field-effect transistors based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide have been fabricated on the pristine SiO2/Si substrate whose surfaces are modified with hexamethyldisilazane (HMDS) and octadecyltriethoxysilane (OTES). The surface modifications have enhanced the electron mobility and on/off ratio, and decreased the threshold voltage. The atomic force microscopy and infrared spectroscopy studies have revealed no differences in the morphology and molecular orientation of the thin films on the pristine and the HMDS-treated substrates.

Original language	English
Pages (from-to)	37-43
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	462
Issue number	1
DOIs	https://doi.org/10.1080/15421400601009369
Publication status	Published - 2006 Jan

Keywords

Atomic force microscopy
Infrared spectroscopy
N,N′-dioctyl-3,4,9,10- perylene tetracarboxylic diimide
Organic field-effect transistor

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421400601009369

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title = "High performance n-channel organic field-effect transistors based on N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide",

abstract = "The organic field-effect transistors based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide have been fabricated on the pristine SiO2/Si substrate whose surfaces are modified with hexamethyldisilazane (HMDS) and octadecyltriethoxysilane (OTES). The surface modifications have enhanced the electron mobility and on/off ratio, and decreased the threshold voltage. The atomic force microscopy and infrared spectroscopy studies have revealed no differences in the morphology and molecular orientation of the thin films on the pristine and the HMDS-treated substrates.",

keywords = "Atomic force microscopy, Infrared spectroscopy, N,N′-dioctyl-3,4,9,10- perylene tetracarboxylic diimide, Organic field-effect transistor",

author = "Yoshinobu Hosoi and Yukio Furukawa",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (A) (16205004) from JSPS and the 21COE {\textquoteleft}{\textquoteleft}Practical Nano-Chemistry{\textquoteright}{\textquoteright} from MEXT.",

year = "2006",

month = jan,

doi = "10.1080/15421400601009369",

language = "English",

volume = "462",

pages = "37--43",

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AU - Hosoi, Yoshinobu

AU - Furukawa, Yukio

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (A) (16205004) from JSPS and the 21COE ‘‘Practical Nano-Chemistry’’ from MEXT.

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AB - The organic field-effect transistors based on N,N'-dioctyl-3,4,9,10- perylene tetracarboxylic diimide have been fabricated on the pristine SiO2/Si substrate whose surfaces are modified with hexamethyldisilazane (HMDS) and octadecyltriethoxysilane (OTES). The surface modifications have enhanced the electron mobility and on/off ratio, and decreased the threshold voltage. The atomic force microscopy and infrared spectroscopy studies have revealed no differences in the morphology and molecular orientation of the thin films on the pristine and the HMDS-treated substrates.

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High performance n-channel organic field-effect transistors based on N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

Abstract

Keywords

ASJC Scopus subject areas

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