High-performance p-channel diamond MOSFETs with alumina gate insulator

Kazuyuki Hirama*, Hidenori Takayanagi, Shintaro Yamauchi, Yoshikatsu Jingu, Hitoshi Umezawa, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

71 Citations (Scopus)


We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an A12O3 gate insulator and demonstrated their improved DC and RF characteristics (IDS= -790 mA/mm and fT= 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm2/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

Original languageEnglish
Article number4419088
Pages (from-to)873-876
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2007 Dec 1
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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