High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa; Hirotada Taniuchi; Takuya Arima; Minoru Tachiki; Hideyo Okushi; Hiroshi Kawarada

High-performance surface-channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency f_T and maximum frequency of oscillation f_max are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of f_T and 30 GHz of f_max.

Original language	English
Pages (from-to)	815-818
Number of pages	4
Journal	Materials Science Forum
Volume	353-356
Publication status	Published - 2001 Mar 14

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "High-performance surface-channel diamond field-effect transistors",

abstract = "High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.",

author = "Hitoshi Umezawa and Hirotada Taniuchi and Takuya Arima and Minoru Tachiki and Hideyo Okushi and Hiroshi Kawarada",

year = "2001",

month = mar,

day = "14",

language = "English",

volume = "353-356",

pages = "815--818",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

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TY - JOUR

T1 - High-performance surface-channel diamond field-effect transistors

AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Arima, Takuya

AU - Tachiki, Minoru

AU - Okushi, Hideyo

AU - Kawarada, Hiroshi

PY - 2001/3/14

Y1 - 2001/3/14

N2 - High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

AB - High transconductance and high channel mobility diamond field-effect transistors (FETs) utilizing self-aligned gate FET fabrication process have been operated. The 2 μm gate metal-semiconductor (MES) FET shows the high frequency operation for the first time. The obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

UR - http://www.scopus.com/inward/record.url?scp=14344279689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14344279689&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:14344279689

SN - 0255-5476

VL - 353-356

SP - 815

EP - 818

JO - Materials Science Forum

JF - Materials Science Forum

ER -

High-performance surface-channel diamond field-effect transistors

Abstract

ASJC Scopus subject areas

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