High-performance transparent flexible transistors using carbon nanotube films

Taishi Takenobu; Tetsuo Takahashi; Takayoshi Kanbara; Kazuhito Tsukagoshi; Yoshinobu Aoyagi; Yoshihiro Iwasa

doi:10.1063/1.2166693

High-performance transparent flexible transistors using carbon nanotube films

Taishi Takenobu^*, Tetsuo Takahashi, Takayoshi Kanbara, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Yoshihiro Iwasa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

121 Citations (Scopus)

Abstract

Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

Original language	English
Article number	033511
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2166693
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2166693

Cite this

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title = "High-performance transparent flexible transistors using carbon nanotube films",

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AU - Aoyagi, Yoshinobu

AU - Iwasa, Yoshihiro

PY - 2006

Y1 - 2006

N2 - Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

AB - Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5 cm2 V s and an on/off current ratio of ∼ 104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5 mm without a significant loss in performance. This study therefore represents a major step towards "SWNT transparent plastic electronics."

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High-performance transparent flexible transistors using carbon nanotube films

Abstract

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