TY - JOUR
T1 - High-power, 790 nm, eight-beam AlGaAs laser array with a monitoring photodiode
AU - Minakuchi, Kimihide
AU - Bessho, Yasuyuki
AU - Inoue, Yasuaki
AU - Komeda, Koji
AU - Tabuchi, Norio
AU - Tominaga, Koji
AU - Tajiri, Atsushi
AU - Yodoshi, Keiichi
AU - Yamaguchi, Takao
PY - 1992/2
Y1 - 1992/2
N2 - A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 μm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operated at 20 mW in APC (Automatic Power Control) mode using the one-beam monitoring control, the total light output variation is less than 7% at a heatsink temperature between 10 and 50°C.
AB - A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 μm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operated at 20 mW in APC (Automatic Power Control) mode using the one-beam monitoring control, the total light output variation is less than 7% at a heatsink temperature between 10 and 50°C.
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M3 - Article
AN - SCOPUS:0026820738
SN - 0021-4922
VL - 31
SP - 508
EP - 512
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 2 B
ER -