High-power, 790 nm, eight-beam AlGaAs laser array with a monitoring photodiode

Kimihide Minakuchi*, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Norio Tabuchi, Koji Tominaga, Atsushi Tajiri, Keiichi Yodoshi, Takao Yamaguchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 μm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operated at 20 mW in APC (Automatic Power Control) mode using the one-beam monitoring control, the total light output variation is less than 7% at a heatsink temperature between 10 and 50°C.

Original languageEnglish
Pages (from-to)508-512
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2 B
Publication statusPublished - 1992 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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