The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Mar 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)