High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto; Yoshiharu Yamauchi; Kazuhide Kumakura

doi:10.1063/1.1675934

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto^*, Yoshiharu Yamauchi, Kazuhide Kumakura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

Original language	English
Pages (from-to)	1964-1966
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1675934
Publication status	Published - 2004 Mar 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1675934

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title = "High-power characteristics of GaN/InGaN double heterojunction bipolar transistors",

abstract = "The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.",

author = "Toshiki Makimoto and Yoshiharu Yamauchi and Kazuhide Kumakura",

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AU - Makimoto, Toshiki

AU - Yamauchi, Yoshiharu

AU - Kumakura, Kazuhide

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Y1 - 2004/3/15

N2 - The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

AB - The high-power characteristics of GaN/InGaN double heterojunction bipolar transistors (HBT) were investigated. It was observed that the maximum collector current was not limited by the thermal effect but by the Kirk effect. It was also observed that the maximum collecter current is proportional to the emitter size. It was found that the breakdown voltage of base-collecter diode exceeded 50 V due to the wide band gap of the n-GaN collector.

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JO - Applied Physics Letters

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IS - 11

ER -

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Abstract

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