High power extraction of 340-350 nm UV-LEDs

Toshio Nishida*, Tomoyuki Ban, Hisao Saito, Naoki Kobayashi, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostracture optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7 %, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.

Original languageEnglish
Pages (from-to)387-399
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2004
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
Duration: 2004 Jan 252004 Jan 29


  • AIN
  • Dislocation
  • Extraction
  • Light emitting diode
  • Ultraviolet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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