High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

K. Ueda; M. Kasu; T. Makimoto

doi:10.1063/1.2715034

High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

K. Ueda^*, M. Kasu, T. Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

Original language	English
Article number	122102
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2715034
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond",

abstract = "The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.",

author = "K. Ueda and M. Kasu and T. Makimoto",

note = "Funding Information: The authors thank Keiichi Torimitsu and Junji Yumoto for their support and encouragement and Katsuhiko Nishiguchi for ion implantation. They owe special thanks to Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout their work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.",

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doi = "10.1063/1.2715034",

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volume = "90",

journal = "Applied Physics Letters",

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T1 - High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

AU - Ueda, K.

AU - Kasu, M.

AU - Makimoto, T.

N1 - Funding Information: The authors thank Keiichi Torimitsu and Junji Yumoto for their support and encouragement and Katsuhiko Nishiguchi for ion implantation. They owe special thanks to Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout their work. This work was partly supported by the SCOPE project of the Ministry of Internal Affairs and Communications, Japan.

PY - 2007

Y1 - 2007

N2 - The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

AB - The authors show that high-pressure and high-temperature (HPHT) annealing is very effective for the activation of ion-implanted dopants in diamond. The HPHT annealing condition is located in the thermodynamically stable region for diamond in the phase diagram and is, therefore, much more efficient for the recovery of implantation-induced damage and for the activation of ion-implanted dopants than thermal annealing in vacuum. The B-implanted film after HPHT annealing showed a high mobility of 632 cm2 V s with a sheet hole concentration of 4.8× 1010 cm-2 at 300 K and the doping efficiency of ∼7%. The mobility is the highest so far for ion-implanted diamond. In the entire annealing temperature range, the HPHT annealing is more efficient than the thermal annealing in vacuum.

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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond

Abstract

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