High purity ozone oxidation on hydrogen passivated silicon surface

A. Kurokawa; S. Ichimura

doi:10.1016/0169-4332(96)00315-7

High purity ozone oxidation on hydrogen passivated silicon surface

A. Kurokawa^*, S. Ichimura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 10¹². Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.

Original language	English
Pages (from-to)	436-439
Number of pages	4
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00315-7
Publication status	Published - 1996 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(96)00315-7

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abstract = "High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 1012. Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.",

author = "A. Kurokawa and S. Ichimura",

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AU - Kurokawa, A.

AU - Ichimura, S.

PY - 1996/7

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N2 - High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 1012. Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.

AB - High purity ozone was used to oxidize hydrogen passivated Si(111) surface. Initial oxide formation was investigated with X-ray photoelectron spectroscopy. The ozone oxidation was disturbed when the surface was gradually covered with hydrogen and finally the rate of oxide formation was reduced to one tenth when the surface was completely covered with hydrogen. This reduction rate is very small compared to the reduction rate for oxygen exposure which is reported to be 1012. Ozone oxidation still proceeds on the hydrogen passivated surface where oxygen molecule does not adsorb at all. Three backbonds of a Si atom are changed to Si-O-Si bridges simultaneously when ozone oxidation proceeds on the hydrogen passivated surface.

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

High purity ozone oxidation on hydrogen passivated silicon surface

Abstract

ASJC Scopus subject areas

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