High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

T. Tsuchiya; T. Taniwatari; T. Haga; T. Kawano

High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

T. Tsuchiya^*, T. Taniwatari, T. Haga, T. Kawano

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The crystal quality of a Zn-diffused thick In_0.76Ga_0.24As_0.55P_0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In_0.47Ga_0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In_0.47Ga_0.53As well layers and InP barrier layers occur, even for very thin layers.

Original language	English
Pages (from-to)	664-667
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1995 Jan 1
Externally published	Yes
Event	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 1995 May 9 → 1995 May 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{853f5f89a6a94319b56a0faefdf4b0a2,

title = "High-quality Zn-diffused InP-related materials fabricated by the open-tube technique",

abstract = "The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.",

author = "T. Tsuchiya and T. Taniwatari and T. Haga and T. Kawano",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "664--667",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials ; Conference date: 09-05-1995 Through 13-05-1995",

}

TY - JOUR

T1 - High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

AU - Tsuchiya, T.

AU - Taniwatari, T.

AU - Haga, T.

AU - Kawano, T.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

AB - The crystal quality of a Zn-diffused thick In0.76Ga0.24As0.55P0.45/InP structure created by the open-tube technique is evaluated. Dislocations, defects and the second photoluminescence peak are not observed. The intermixing of the Zn-diffused In0.47Ga0.53As/InP multiple quantum wells structure at the heterointerface is investigated, and the results show that no intermixing of In and Ga at the heterointerface between In0.47Ga0.53As well layers and InP barrier layers occur, even for very thin layers.

UR - http://www.scopus.com/inward/record.url?scp=0029228695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029228695&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029228695

SN - 1092-8669

SP - 664

EP - 667

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials

Y2 - 9 May 1995 through 13 May 1995

ER -

High-quality Zn-diffused InP-related materials fabricated by the open-tube technique

Abstract

ASJC Scopus subject areas

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